While TSMC’s 3nm architecture is yet to be adopted by the company for its chip manufacturing process, Samsung just announced that it has already started producing chipsets based on its 3nm process technology with GAA architecture. With the commencement of the manufacturing, Samsung has successfully beaten the Taiwanese chipmaker by becoming the first semiconductor company to adopt the 3nm node. Here are the details!
Samsung recently shared an official Newsroom post to announce the initial production of its 3nm process node with Gate-All-Around (GAA) architecture. The company says that the 3nm node along with the Multi-Bridge Channel FET (MBCFET) GAA architecture “defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability.”
“Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as the foundry industry’s first High-K Metal Gate, FinFET, as well as EUV. We seek to continue this leadership with the world’s first 3nm process with the MBCFET. We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology,” said Dr. Siyoung Choi, the President and Head of the Foundry Business at Samsung.
Now, becoming the first company to adopt the advanced 3nm process for chip manufacturing does give Samsung an upper hand over its competitor TSMC. However, according to Bloomberg, this won’t affect the latter’s market share or sales growth in the next 12 months unless Samsung proves that its 3nm process can be as cost-efficient as TSMC’s advanced N3 process. If the Korean giant succeeds in that, it can garner contract orders from Apple, Qualcomm, and other industry giants.
